2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTA1700
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTC2800.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70~140, Y:120~240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-160
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
Base Current
I
B
-0.3
A
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-160V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-160
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-5.0
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-5V, I
C
=-100mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.5
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
30
-
pF
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